US Patent 11804708 Fast triggering electrostatic discharge protection
Patent 11804708 was granted and assigned to Nvidia on October, 2023 by the United States Patent and Trademark Office.
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US Patent 11804708 Fast triggering electrostatic discharge protection
Article
Patent abstract
An electrostatic discharge protection circuit is disclosed. It comprises a stacked drain-ballasted NMOS devices structure and a gate bias circuit. The gate bias circuit includes an inverter, a first gate bias output terminal, and a second gate bias output terminal. The first gate bias output terminal is coupled to a gate of a first one of the drain-ballasted NMOS devices. The second gate bias output terminal runs from an output of the inverter to a gate of a second one of the drain-ballasted NMOS devices.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jauwen Chen
Sunitha Venkataraman
Ting Ku
Date of Patent
October 31, 2023
Patent Application Number
16812048
Date Filed
March 6, 2020
Patent Citations
Patent Primary Examiner
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