US Patent 11805706 Magnetoresistance effect element and magnetic memory

A magnetoresistance effect element includes: a laminate body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring connected to the laminate body. A second surface opposite to a first surface of the spin-orbit torque wiring in contact with the laminate body is curved in a first direction orthogonal to a direction in which the laminate body is laminated.