Patent attributes
A method for fabricating a semiconductor device includes providing a substrate; sequentially forming a layer of first conductive material, a layer of second conductive material, a layer of third conductive material, and an anti-reflective coating layer over the substrate; performing a plug etch process to turn the layer of first conductive material into a bottom conductive layer on the substrate, turn the layer of second conductive material into a middle conductive layer on the bottom conductive layer, and turn the layer of third conductive material into a top conductive layer on the middle conductive layer; selectively forming an insulating covering layer on a sidewall of the middle conductive layer, wherein the bottom conductive layer, the middle conductive layer, the top conductive layer, and the insulating covering layer together configure a plug structure; and forming a first dielectric layer on the substrate and surrounding the plug structure.
