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US Patent 11832430 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 30, 2021
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Date of Patent
November 28, 2023
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Patent Application Number
17363748
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Patent Citations
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US Patent 8395220 Nanomesh SRAM cell
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US Patent 10490559 Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions
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US Patent 9935204 Static random access memory (SRAM) device for improving electrical characteristics and logic device including the same
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US Patent 10541305 Group III-N nanowire transistors
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US Patent 7663166 Wire-type semiconductor devices and methods of fabricating the same
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US Patent 8084308 Single gate inverter nanowire mesh
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Patent Inventor Names
Daewon Ha
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Mingyu Kim
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Munhyeon Kim
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11832430
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 29/42392
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H01L 29/165
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H01L 29/66439
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H01L 29/1083
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G11C 11/412
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H01L 29/1033
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H01L 29/78696
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H01L 29/0673
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H01L 27/1104
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