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US Patent 11837290 Nonvolatile memory device and operation method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 16, 2022
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Date of Patent
December 5, 2023
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Patent Application Number
17745837
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Patent Citations
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US Patent 11056191 Nonvolatile memory device having different DQ lines receiving DQ line codes and method of operating nonvolatile memory device using different threshold voltages or error margins
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US Patent 11335405 Nonvolatile memory device and operation method thereof
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US Patent 7099194 Error recovery for nonvolatile memory
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US Patent 7352628 Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
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US Patent 7948798 Mixed multi-level cell and single level cell storage device
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US Patent 8713380 Non-volatile memory and method having efficient on-chip block-copying with controlled error rate
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US Patent 8898374 Flash memory device and method for managing flash memory device
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US Patent 8902652 Systems and methods for lower page writes
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US Patent 8972822 Memory module and semiconductor storage device
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US Patent 9620221 Semiconductor memory device and operating method thereof
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•••
Patent Inventor Names
Joonsoo Kwon
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11837290
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Patent Primary Examiner
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Tan T. Nguyen
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