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US Patent 11837322 Memory devices operating on different states of clock signal

Patent 11837322 was granted and assigned to ChangXin Memory Technologies on December, 2023 by the United States Patent and Trademark Office.

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Is a

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Patent attributes

Patent Applicant

ChangXin Memory Technologies

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Current Assignee

ChangXin Memory Technologies

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Shu-Liang Nin0

Date of Patent

December 5, 2023

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Patent Application Number

174099150

Date Filed

August 24, 2021

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Patent Citations

US Patent 9396766 Semiconductor device having memory chip stacks with TSV

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US Patent 9805802 Memory device, memory module, and memory system

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US Patent 10068624 Electronic device and operating method thereof

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US Patent 10446198 Multiple concurrent modulation schemes in a memory system

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US Patent 10725913 Variable modulation scheme for memory device access or operation

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US Patent 10915473 Data storage device

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US Patent 10978116 Multiple concurrent modulation schemes in a memory system

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US Patent 8194090 Method of controlling frame memory, memory control circuit, and image processing apparatus including the memory control circuit

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Patent Primary Examiner

Vanthu T Nguyen

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CPC Code

0

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Patent abstract

A memory is provided. The memory includes a control chip (

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