US Patent 11837646 3D capacitor and method of manufacturing same
Patent 11837646 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.
All edits
US Patent 11837646 3D capacitor and method of manufacturing same
A device includes a substrate including a low-resistance top surface and a fin structure including a first fin and a second fin. Each of the first and second fins includes a low-resistance fin-top surface and two low-resistance sidewall surfaces. The device includes an insulation material over the top surface of the substrate and between the first fin and the second fin. The fin-top surface and a first portion of the sidewall surfaces of each of the first and the second fins are above the insulation material. The device further includes a dielectric layer over the insulation material and in direct contact with the fin-top surface and the first portion of the sidewall surfaces of each of the first and the second fins; a first electrode in direct contact with the fin-top surface of the first fin; and a second electrode over the dielectric layer that is over the second fin.
Find more entities like US Patent 11837646 3D capacitor and method of manufacturing same
