Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takasi Simoyama0
Date of Patent
December 5, 2023
0Patent Application Number
168327130
Date Filed
March 27, 2020
0Patent Citations
Patent Primary Examiner
Patent abstract
An apparatus includes a first semiconductor layer including a first bandgap; and a second semiconductor layer of a first polarity including a second bandgap smaller than the first bandgap and formed over the first semiconductor layer. The first semiconductor layer includes a first conductive region of the first polarity, a second conductive region of a second polarity, and a non-conductive region between the first conductive region and the second conductive region, and the second semiconductor layer is in contact with the first conductive region and the non-conductive region.
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