US Patent 11842766 Anti-fuse memory circuit
Patent 11842766 was granted and assigned to ChangXin Memory Technologies on December, 2023 by the United States Patent and Trademark Office.
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US Patent 11842766 Anti-fuse memory circuit
Article
Patent abstract
Provided is an anti-fuse memory circuit. The anti-fuse memory circuit includes a memory array, a bit line (BL), and a word line (WL); an anti-fuse memory cell (FsBIn) electrically connected to the bit line (BL) through a first switch transistor (
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Rumin Ji0
Date of Patent
December 12, 2023
0Patent Application Number
175715770
Date Filed
January 10, 2022
0Patent Citations
Patent Primary Examiner
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