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US Patent 11842961 Advanced metal interconnects with a replacement metal

Overview Structured Data Issues Contributors Activity

Is a

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Date Filed

August 26, 2021

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Date of Patent

December 12, 2023

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Patent Application Number

17412300

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Patent Citations

US Patent 7892982 Method for forming fine patterns of a semiconductor device using a double patterning process

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US Patent 9536830 High performance refractory metal / copper interconnects to eliminate electromigration

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US Patent 10256186 Interconnect structure having subtractive etch feature and damascene feature

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US Patent 10014256 Unidirectional metal on layer with ebeam

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US Patent 10490569 Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings

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US Patent 7187085 Semiconductor device including dual damascene interconnections

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US Patent 7476618 Selective formation of metal layers in an integrated circuit

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Patent Inventor Names

Kisik Choi

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Brent Anderson

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Lawrence A. Clevenger

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Nicholas Anthony Lanzillo

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

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Patent Primary Examiner

Galina G Yushina

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CPC Code

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