US Patent 11842968 Power semiconductor device and substrate with dimple region
Patent 11842968 was granted and assigned to Mitsubishi Electric Corporation on December, 2023 by the United States Patent and Trademark Office.
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US Patent 11842968 Power semiconductor device and substrate with dimple region
Article
Patent abstract
A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Atsuki Fujita0
Hiroaki Haruna0
Kohei Yabuta0
Masaru Fuku0
Noriyuki Besshi0
Takayuki Yamada0
Yutaro Sugi0
Yuya Muramatsu0
Date of Patent
December 12, 2023
0Patent Application Number
177327510
Date Filed
April 29, 2022
0Patent Citations
Patent Primary Examiner
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