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US Patent 11843040 MIS contact structure with metal oxide conductor

Overview Structured Data Issues Contributors Activity

Is a

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Date Filed

November 10, 2020

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Date of Patent

December 12, 2023

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Patent Application Number

17094651

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Patent Citations

US Patent 7084423 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 9209261 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 9287138 FinFET low resistivity contact formation method

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US Patent 9362376 Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers

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US Patent 9425277 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 9461167 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 9905691 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 9978835 Semiconductor device including nanowire transistor

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US Patent 10090395 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

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US Patent 10147798 MIS contact structure with metal oxide conductor

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Patent Inventor Names

Paul A. Clifton

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Andreas Goebel

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

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Patent Primary Examiner

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CPC Code

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