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US Patent 11843053 Semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 10, 2021
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Date of Patent
December 12, 2023
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Patent Application Number
17398550
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Patent Citations
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US Patent 10553696 Full air-gap spacers for gate-all-around nanosheet field effect transistors
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US Patent 10361202 Multigate metal-oxide semiconductor field effect transistor
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US Patent 10714387 Integrated circuit devices and method of manufacturing the same
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US Patent 9941405 Nanosheet and nanowire devices having source/drain stressors and methods of manufacturing the same
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US Patent 10079305 Semiconductor device and method of fabricating the same
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Patent Inventor Names
Young Dae Cho
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Su Jin Jung
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Ki Hwan Kim
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Sung Uk Jang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11843053
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Patent Primary Examiner
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Eric A. Ward
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CPC Code
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H01L 29/78696
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H01L 29/66787
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H01L 29/42392
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H01L 29/0673
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