Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jun Chen0
Yimin Guo0
Rongfu Xiao0
Date of Patent
December 26, 2023
0Patent Application Number
175090140
Date Filed
October 24, 2021
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.
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