Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
YungHao Wang0
Ya-Wen Chiu0
Cheng-Po Chau0
Yi Che Chan0
Sen-Hong Syue0
Chih Ping Liao0
Szu-Ying Chen0
Date of Patent
December 26, 2023
0Patent Application Number
173294770
Date Filed
May 25, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.
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