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US Patent 11854905 Silicon and silicon germanium nanowire formation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 25, 2022
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Date of Patent
December 26, 2023
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Patent Application Number
17814692
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Patent Citations
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US Patent 8084308 Single gate inverter nanowire mesh
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US Patent 9129829 Silicon and silicon germanium nanowire structures
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US Patent 9171843 Semiconductor device and fabricating the same
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US Patent 9184269 Silicon and silicon germanium nanowire formation
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US Patent 9224810 CMOS nanowire structure
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US Patent 9318573 Field effect transistor having germanium nanorod and method of manufacturing the same
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US Patent 9595581 Silicon and silicon germanium nanowire structures
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US Patent 9634007 Trench confined epitaxially grown device layer(s)
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US Patent 9634091 Silicon and silicon germanium nanowire formation
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US Patent 9691851 Semiconductor device and manufacturing method thereof
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•••
Patent Inventor Names
Kuo-Cheng Chiang
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Carlos H. Diaz
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Jean-Pierre Colinge
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Jin-Aun Ng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11854905
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Patent Primary Examiner
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Earl N Taylor
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CPC Code
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H01L 29/78696
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H01L 29/775
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H01L 29/66439
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H01L 29/42392
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H01L 21/823807
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H01L 29/0847
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B82Y 10/00
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