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US Patent 11854907 Contact air gap formation and structures thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
April 5, 2021
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Date of Patent
December 26, 2023
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Patent Application Number
17222739
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Patent Citations
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9520482 Method of cutting metal gate
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US Patent 9608065 Air gap spacer for metal gates
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US Patent 8772109 Apparatus and method for forming semiconductor contacts
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•••
Patent Inventor Names
Sai-Hooi Yeong
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Kai-Hsuan Lee
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11854907
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 21/823814
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H01L 21/823821
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H01L 27/0924
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H01L 29/0847
0
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H01L 29/66795
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H01L 29/7851
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H01L 2221/1063
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H01L 21/823425
0
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H01L 21/823475
0
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H01L 29/0653
0
•••

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