US Patent 11855128 Metal insulator metal (MIM) structure and manufacturing method thereof

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to a base portion of the bottom electrode layer. The bottom electrode layer includes the base portion and a plurality of protrusions, each of the protrusions is protruding from the base portion and leveled with a lower surface of the dielectric layer, each portion of the dielectric layer over the bottom electrode layer substantially have identical thicknesses.