US Patent 11855154 Vertical interconnect features and methods of forming
Patent 11855154 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.
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US Patent 11855154 Vertical interconnect features and methods of forming
Article
Patent abstract
Vertical interconnect structures and methods of forming are provided. The vertical interconnect structures may be formed by partially filling a first opening through one or more dielectric layers with layers of conductive materials. A second opening is formed in a dielectric layer such that a depth of the first opening after partially filling with the layers of conductive materials is close to a depth of the second opening. The remaining portion of the first opening and the second opening may then be simultaneously filled.
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chao-Hsun Wang0
Chen-Yuan Kao0
Feng-Yu Chang0
Kuo-Yi Chao0
Mei-Yun Wang0
Po-Yu Huang0
Rueijer Lin0
Shih-Che Lin0
Date of Patent
December 26, 2023
0Patent Application Number
173924590
Date Filed
August 3, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
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