Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Fu-Ting Yen0
Hsin-Hao Yeh0
Date of Patent
December 26, 2023
0Patent Application Number
176577700
Date Filed
April 4, 2022
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
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