Patent 11855452 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.
An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.