US Patent 11856799 Semiconductor devices, hybrid transistors, and related methods

Methods of forming a semiconductor device are disclosed. A method comprising forming a hybrid transistor supported by a substrate. Forming the hybrid transistor comprises forming a source including a first low bandgap high mobility material, and forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material. Forming the hybrid transistor further comprises forming a drain including a second low bandgap high mobility material coupled with the a high bandgap low mobility material, and forming a gate separated from the channel via a gate oxide material. Methods of forming a transistor are also disclosed.