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US Patent 11856866 Magnetic tunnel junction devices
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Patent
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Date Filed
May 9, 2022
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Date of Patent
December 26, 2023
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Patent Application Number
17740145
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Patent Citations
US Patent 9564577 MRAM device and fabrication method
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US Patent 9847481 Metal landing on top electrode of RRAM
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Patent Inventor Names
Chung-Ju Lee
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Chih-Wei Lu
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Pin-Ren Dai
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Wei-Hao Liao
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Hsi-Wen Tien
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11856866
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Patent Primary Examiner
Tu-Tu V Ho
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CPC Code
H01L 27/222
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H01L 27/228
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H01L 43/12
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H01L 43/10
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H01L 43/02
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H01L 43/08
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H01L 23/5226
0
G11C 11/161
0
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