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US Patent 11862691 Field effect transistor having field plate
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Patent
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Date Filed
November 1, 2019
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Date of Patent
January 2, 2024
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Patent Application Number
16671438
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Patent Citations
US Patent 8530978 High current high voltage GaN field effect transistors and method of fabricating same
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US Patent 9653556 Field plate for high-voltage field effect transistors
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US Patent 8120064 Wide bandgap transistor devices with field plates
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US Patent 9449826 Graded well implantation for asymmetric transistors having reduced gate electrode pitches
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Patent Inventor Names
Eduardo M. Chumbes
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Brian T. Appleton, Jr.
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Michael S. Davis
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11862691
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Patent Primary Examiner
Eric K Ashbahian
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CPC Code
H01L 29/408
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H01L 29/402
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H01L 21/02321
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