Patent 11862965 was granted and assigned to ChangXin Memory Technologies on January, 2024 by the United States Patent and Trademark Office.
The present disclosure provides an electrostatic discharge protection circuit, a chip including a first pad and a second pad. The electrostatic discharge protection circuit includes a trigger unit and a discharge transistor. The trigger unit is connected between the first pad and the second pad, provided with a trigger terminal, and configured to generate a trigger signal when there is an electrostatic pulse on the first pad. The first pad is connected to a first voltage, the second pad is connected to a second voltage, and the first voltage is greater than the second voltage. The discharge transistor has a first terminal connected to the first pad, and a second terminal connected to the second pad, and discharges an electrostatic charge to the second pad when triggered by the trigger signal.