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US Patent 11869774 Method for improving etching rate of wet etching

Patent 11869774 was granted and assigned to ChangXin Memory Technologies on January, 2024 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Patent Applicant
ChangXin Memory Technologies
ChangXin Memory Technologies
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Current Assignee
ChangXin Memory Technologies
ChangXin Memory Technologies
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118697740
Patent Inventor Names
Nannan Zhang0
Yen-Teng Huang0
Date of Patent
January 9, 2024
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Patent Application Number
174452990
Date Filed
August 17, 2021
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Patent Citations
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US Patent 8889563 Method and apparatus for etching the silicon oxide layer of a semiconductor substrate
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US Patent 7083741 Process and device for the wet-chemical treatment of silicon
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US Patent 8945939 Control over hydrogen fluoride levels in oxide etchant
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Patent Primary Examiner
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Shamim Ahmed
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Patent abstract

A method for improving an etching rate of wet etching involves an etching reaction chamber used for etching work. The etching reaction chamber is connected with an etchant supply mechanism. The etchant supply mechanism is connected with a purified water supply mechanism. The purified water supply mechanism injects purified water into the etchant supply mechanism according to a change range of pH of the etchant in the etchant supply mechanism to ensure that a hydrogen ion concentration and a fluoride ion concentration of the etchant in the etchant supply mechanism are stable.

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