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US Patent 11874480 Plasmonic lithography for patterning high aspect-ratio nanostructures

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Xi Chen0

Lingjie Jay Guo0

Date of Patent

January 16, 2024

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Patent Application Number

169563340

Date Filed

December 20, 2018

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Patent Citations

US Patent 10795168 Transmissive metasurface lens integration

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US Patent 9069244 Mask for near-field lithography and fabrication the same

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US Patent 8995055 Angular and spectral selective absorber in ultrathin metamaterials

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Patent Primary Examiner

Jonathan Y Jung

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CPC Code

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Patent abstract

A plasmonic device incorporating a special hyperbolic metamaterial (HMM) metamaterial is used for plasmonic lithography, including ultraviolet (UV) lithography. It may be a Type II HMM (ϵ

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