US Patent 11877501 Post-processing method of quantum dot light-emitting diode
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US Patent 11877501 Post-processing method of quantum dot light-emitting diode
Article
Patent abstract
A post-processing method of a quantum dot light-emitting diode, which includes the following steps: providing a quantum dot light-emitting diode, the quantum dot light-emitting diode includes a cathode and an anode arranged oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode; energizing the cathode and anode of the quantum dot light-emitting diode, and performing a light irradiation treatment on the quantum dot light-emitting diode.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Chaoyu Xiang0
Jie Zhang0
Date of Patent
January 16, 2024
0Patent Application Number
174196470
Date Filed
September 17, 2019
0Patent Citations
Patent Primary Examiner
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