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US Patent 11880571 Counter-based methods and systems for accessing memory cells

Patent 11880571 was granted and assigned to Micron Technology on January, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Micron Technology
Micron Technology
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Current Assignee
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118805710
Patent Inventor Names
Riccardo Muzzetto0
Ferdinando Bedeschi0
Umberto di Vincenzo0
Date of Patent
January 23, 2024
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Patent Application Number
170441500
Date Filed
May 13, 2020
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Patent Citations
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US Patent 9355715 Memory system and method of operating the same
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US Patent 7864567 Programming a normally single phase chalcogenide material for use as a memory of FPLA
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US Patent 8239735 Memory Device with adaptive capacity
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US Patent 9099174 Drift acceleration in resistance variable memory
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US Patent 9230638 Semiconductor memory device including plurality of memory cells and method of operating the same
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US Patent 9275730 Apparatuses and methods of reading memory cells based on response to a test pulse
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US Patent 9613691 Apparatus and method for drift cancellation in a memory
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US Patent 10026486 First read countermeasures in memory
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...
Patent Primary Examiner
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Khoa D Doan
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CPC Code
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G06F 2212/7211
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G06F 2212/1036
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G11C 2211/5644
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G11C 2029/0411
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G11C 2213/71
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G11C 7/1006
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G11C 13/004
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G06F 3/0629
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Patent abstract

The present disclosure relates to a method for accessing an array of memory cells, comprising the steps of storing user data in a plurality of memory cells of a memory array, storing, in a counter associated to the array of memory cells, count data corresponding to a number of bits in the user data having a predetermined first logic value, applying a read voltage to the memory cells to read the user data stored in the array of memory cells, applying the read voltage to the cells of the counter to read the count data stored in the counter and to provide a target value corresponding to the number of bits in the user data having the first logic value, wherein, during the application of the read voltage, the count data are read simultaneously to the user data in such a way that the target value is provided during the reading of the user data, and based on the target value of the counter, stopping the application of the read voltage when the number of bits in the user data having the first logic value corresponds to the target value. A related memory device and a related system are also disclosed.

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