US Patent 11881379 Film deposition apparatus for fine pattern forming
Patent 11881379 was granted and assigned to Tokyo Electron on January, 2024 by the United States Patent and Trademark Office.
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US Patent 11881379 Film deposition apparatus for fine pattern forming
Article
Patent abstract
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroki Murakami0
Jun Ogawa0
Kazuhide Hasebe0
Shigeru Nakajima0
Date of Patent
January 23, 2024
0Patent Application Number
178083750
Date Filed
June 23, 2022
0Patent Citations
Patent Primary Examiner
CPC Code
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