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US Patent 11881433 Advanced copper interconnects with hybrid microstructure
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Patent
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Date Filed
December 9, 2021
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Date of Patent
January 23, 2024
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Patent Application Number
17546511
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Patent Citations
US Patent 10615074 Advanced copper interconnects with hybrid microstructure
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US Patent 9799605 Advanced copper interconnects with hybrid microstructure
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US Patent 10276435 Advanced copper interconnects with hybrid microstructure
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US Patent 6864152 Fabrication of trenches with multiple depths on the same substrate
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US Patent 6932916 Semiconductor substrate with trenches of varying depth
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US Patent 6969686 Memory device having isolation trenches with different depths and the method for making the same
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US Patent 7284958 Separable blade platform
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US Patent 7318577 Motor-operated valve assembly
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US Patent 7545040 Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
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US Patent 7566653 Interconnect structure with grain growth promotion layer and method for forming the same
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•••
Patent Inventor Names
Daniel C. Edelstein
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Chih-Chao Yang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11881433
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Patent Primary Examiner
Moin M Rahman
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CPC Code
H01L 21/288
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H01L 21/823475
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H01L 21/02164
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