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US Patent 11881523 Heterojunction bipolar transistors

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 10, 2022
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Date of Patent
January 23, 2024
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Patent Application Number
17740725
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Patent Citations
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US Patent 9502504 SOI lateral bipolar transistors having surrounding extrinsic base portions
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US Patent 9437718 Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
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US Patent 9748369 Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate
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US Patent 7462923 Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS process
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US Patent 8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor
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Patent Inventor Names
Judson R. Holt
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Shesh Mani Pandey
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Vibhor Jain
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11881523
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Patent Primary Examiner
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Syed I Gheyas
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CPC Code
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H01L 29/66272
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H01L 29/7371
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H01L 29/66242
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H01L 29/1004
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