Patent attributes
A magnetic shielding structure for protecting an MRAM array from adverse switching effects due to external magnetic fields of neighboring devices is provided. The magnetic shielding structure includes a bottom magnetic shield material-containing layer and a top magnetic shield material-containing layer within the MRAM array. The bottom and top magnetic shield material-containing layers can be connected by a vertical magnetic shield containing-material layer that is located near each end of the bottom and top magnetic shield material-containing layers. The bottom magnetic shield material-containing layer is located beneath a MTJ pillar of each MRAM device, but above, bottom electrically conductive structures that are in electrical contact with the MRAM devices. The top magnetic shield material-containing layer is located above the MRAM devices, and is located laterally adjacent to, but not above or below, top electrically conductive structures that are also in electrical contact with the MRAM devices.
