US Patent 11887814 Plasma processing method
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US Patent 11887814 Plasma processing method
Article
Patent abstract
Provided is a plasma processing method capable of improving an etching selectivity of a material to be etched with respect to a mask material and reducing a roughness of a side wall of a mask pattern. The plasma processing method of selectively depositing a deposition film on the mask material with respect to the material to be etched includes controlling an etching parameter so that an incubation time of the mask material is shorter than an incubation time of the material to be etched.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Kenichi Kuwahara0
Mamoru Yakushiji0
Masaaki Taniyama0
Date of Patent
January 30, 2024
0Patent Application Number
172778120
Date Filed
February 10, 2020
0Patent Citations
Patent Primary Examiner
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