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US Patent 11888031 Fin-based lateral bipolar junction transistor and method
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Patent
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Date Filed
November 30, 2021
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Date of Patent
January 30, 2024
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Patent Application Number
17537564
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Patent Citations
US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 10741645 Thin-base high frequency lateral bipolar junction transistor
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US Patent 8586441 Germanium lateral bipolar junction transistor
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US Patent 10825921 Lateral bipolar junction transistor with controlled junction
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US Patent 6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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Patent Inventor Names
Judson R. Holt
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Hong Yu
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Zhenyu Hu
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11888031
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Patent Primary Examiner
Evren Seven
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