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US Patent 11894039 FFT-DRAM
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Patent
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Date Filed
June 22, 2022
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Date of Patent
February 6, 2024
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Patent Application Number
17846985
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Patent Citations
US Patent 11373696 FFT-dram
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US Patent 8847315 Complementary metal-oxide-semiconductor (CMOS) device and method
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US Patent 9397003 Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniques
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US Patent 7023068 Method of etching a lateral trench under a drain junction of a MOS transistor
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US Patent 7045407 Amorphous etch stop for the anisotropic etching of substrates
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US Patent 7227224 MOS transistor with elevated source and drain structures and method of fabrication thereof
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US Patent 7459752 Ultra thin body fully-depleted SOI MOSFETs
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US Patent 7569456 MOS transistor with elevated source and drain structures and method of fabrication thereof
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US Patent 7589347 Method for fabricating lateral semiconductor device
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US Patent 7732285 Semiconductor device having self-aligned epitaxial source and drain extensions
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•••
Patent Inventor Names
Robert J. Strain
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Mammen Thomas
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11894039
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Patent Primary Examiner
Huan Hoang
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CPC Code
G11C 11/4074
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G11C 11/4097
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H01L 27/0924
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G11C 11/4023
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