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US Patent 11894265 Top via with damascene line and via
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Patent
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Date Filed
September 20, 2021
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Date of Patent
February 6, 2024
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Patent Application Number
17479346
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Patent Citations
US Patent 7947594 Interconnection structure with low dielectric constant
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US Patent 9613861 Damascene wires with top via structures
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US Patent 8611055 Magnetic etch-stop layer for magnetoresistive read heads
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US Patent 10049920 Reduced tip-to-tip and via pitch at line end
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US Patent 7259087 Semiconductor devices having a via hole and methods for forming a via hole in a semiconductor device
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US Patent 7326651 Method for forming damascene structure utilizing planarizing material coupled with compressive diffusion barrier material
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Patent Inventor Names
Robert Robison
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Lawrence A. Clevenger
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Nicholas Anthony Lanzillo
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Christopher J. Penny
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Kisik Choi
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Brent Anderson
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11894265
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Patent Primary Examiner
Shahed Ahmed
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CPC Code
H01L 21/76865
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H01L 21/76885
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H01L 21/76883
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H01L 21/76852
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H01L 21/76834
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H01L 23/53266
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H01L 23/5226
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H01L 21/76879
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H01L 21/76802
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H01L 21/76843
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