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US Patent 11894442 Full nanosheet airgap spacer

Overview Structured Data Issues Contributors Activity

Is a

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Date Filed

June 25, 2021

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Date of Patent

February 6, 2024

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Patent Application Number

17358275

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Patent Citations

US Patent 10553696 Full air-gap spacers for gate-all-around nanosheet field effect transistors

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US Patent 10910470 Nanosheet transistors with inner airgaps

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US Patent 10692991 Gate-all-around field effect transistors with air-gap inner spacers and methods

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US Patent 10971585 Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates

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US Patent 9853132 Nanosheet MOSFET with full-height air-gap spacer

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US Patent 9954058 Self-aligned air gap spacer for nanosheet CMOS devices

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Patent Inventor Names

Ruilong Xie

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Kangguo Cheng

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Lan Yu

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Reinaldo Vega

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Jingyun Zhang

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

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Patent Primary Examiner

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CPC Code

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