US Patent 11908732 Alternating spacers for pitch structure

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Patent

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Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

119087320

Patent Inventor Names

Chanro Park0

Hsueh-Chung Chen0

Koichi Motoyama0

Date of Patent

February 20, 2024

Patent Application Number

174758290

Date Filed

September 15, 2021

Patent Citations

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US Patent 9287135 Sidewall image transfer process for fin patterning

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US Patent 9305782 Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same

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US Patent 9627389 Methods to form merged spacers for use in fin generation in IC devices

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US Patent 9831117 Self-aligned double spacer patterning process

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US Patent 9673055 Method for quadruple frequency FinFETs with single-fin removal

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US Patent 9911646 Self-aligned double spacer patterning process

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US Patent 8865598 Method for positioning spacers in pitch multiplication

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US Patent 8916472 Interconnect formation using a sidewall mask layer

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Patent abstract

A method of forming a pitch pattern is provided. The method includes forming two adjacent mandrels separated by a first distance, D

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US Patent 11908732 Alternating spacers for pitch structure

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