Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ya-Yun Cheng0
Clement Hsingjen Wann0
Yi-Jing Lee0
I-Sheng Chen0
Chih-Hsin Ko0
Hau-Yu Lin0
Chia-Ming Hsu0
Date of Patent
February 20, 2024
0Patent Application Number
180577410
Date Filed
November 21, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A method includes: providing a first gate electrode over the substrate; forming a first pair of spacers on two sides of the first gate electrode; removing the first gate electrode to form a first trench between the first pair of spacers; depositing a dielectric layer in the first trench; depositing a first layer over the dielectric layer; removing the first layer from the first trench; and depositing a work function layer over the dielectric layer in the first trench.
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