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US Patent 11908904 Planar gate semiconductor device with oxygen-doped Si-layers

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
August 12, 2021
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Date of Patent
February 20, 2024
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Patent Application Number
17400575
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Patent Citations
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US Patent 10510836 Gate trench device with oxygen inserted si-layers
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US Patent 10580888 Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
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US Patent 10573742 Oxygen inserted Si-layers in vertical trench power devices
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US Patent 10741638 Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
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US Patent 7858478 Method for producing an integrated circuit including a trench transistor and integrated circuit
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US Patent 8067800 Super-junction trench MOSFET with resurf step oxide and the method to make the same
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Patent Inventor Names
Yulia Polak
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Sylvain Leomant
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Thomas Feil
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Maximilian Roesch
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11908904
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Patent Primary Examiner
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Eugene Lee
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CPC Code
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H01L 29/7802
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H01L 27/088
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H01L 29/407
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