US Patent 11914471 Block failure protection for zone memory system
Patent 11914471 was granted and assigned to Micron Technology on February, 2024 by the United States Patent and Trademark Office.
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US Patent 11914471 Block failure protection for zone memory system
Article
Patent abstract
Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, and the generated parity is stored in a parity zone of the memory device.
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Current Assignee
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Patent Number
Patent Inventor Names
Sanjay Subbarao0
Date of Patent
February 27, 2024
0Patent Application Number
178233650
Date Filed
August 30, 2022
0Patent Citations
Patent Primary Examiner
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