Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ruilong Xie0
Julien Frougier0
Chanro Park0
Kangguo Cheng0
Date of Patent
February 27, 2024
0Patent Application Number
173926910
Date Filed
August 3, 2021
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A complementary field effect transistor (CFET) structure including a first transistor disposed above a second transistor, a first source/drain region of the first transistor disposed above a second source/drain region of the second transistor, wherein the first source/drain region comprises a smaller cross-section than the second source/drain region, a first dielectric material disposed in contact with a bottom surface and vertical surfaces of the first source/drain region and further in contact with a vertical surface and top surface of the second source/drain region, and a second dielectric material disposed as an interlayer dielectric material encapsulating the first and second transistors.
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