Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ya-Yun Cheng0
Chih-Hsin Ko0
Clement Hsing Jen Wann0
Chun Hsiung Tsai0
Date of Patent
February 27, 2024
0Patent Application Number
180970570
Date Filed
January 13, 2023
0Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.
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