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US Patent 11916124 Transistor gates and methods of forming

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
April 11, 2022
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Date of Patent
February 27, 2024
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Patent Application Number
17717382
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Patent Citations
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US Patent 11302793 Transistor gates and method of forming
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US Patent 10700064 Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
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US Patent 9997519 Dual channel structures with multiple threshold voltages
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Patent Inventor Names
Cheng-Lung Hung
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Ji-Cheng Chen
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Chi On Chui
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Hsin-Yi Lee
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11916124
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 29/0665
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H01L 29/0673
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H01L 2029/7858
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H01L 21/823842
0
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H01L 29/4908
0
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H01L 27/092
0
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H01L 29/0676
0
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H01L 29/66439
0
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H01L 29/78696
0
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H01L 29/66545
0
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