US Patent 11916148 Multi-functional field effect transistor with intrinsic self-healing properties

A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 μm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.