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US Patent 11917838 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
January 24, 2022
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Date of Patent
February 27, 2024
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Patent Application Number
17582092
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Patent Citations
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US Patent 7402506 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
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US Patent 8319218 Oxide semiconductor layer and semiconductor device
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US Patent 8324628 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
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US Patent 8363452 Semiconductor device
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US Patent 8384077 Field effect transistor using oxide semicondutor and method for manufacturing the same
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US Patent 8420442 Method of fabricating a thin-film device
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US Patent 8604547 Memory element and semiconductor device
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US Patent 8664035 Memory element and semiconductor device
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US Patent 8704217 Field effect transistor, semiconductor device and semiconductor device manufacturing method
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US Patent 8889480 Method of fabricating a thin-film device
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•••
Patent Inventor Names
Kiyoshi Kato
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Shunpei Yamazaki
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Jun Koyama
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11917838
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Patent Primary Examiner
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Thanh Y. Tran
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CPC Code
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H01L 29/16
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H01L 29/24
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H01L 29/7869
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H01L 29/78696
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H01L 27/0688
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H01L 29/7833
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H01L 27/1225
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H01L 27/124
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H01L 27/1255
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