Patent attributes
Illustrative embodiments provide techniques for fabricating semiconductor structures having bottom isolation and enhanced carrier mobility for both nFET and pFET devices. For example, in one illustrative embodiment, a semiconductor structure includes a semiconductor substrate, a first dielectric layer disposed on the semiconductor substrate, a bottom source/drain region disposed on the first dielectric layer and isolated from the semiconductor substrate by the first dielectric layer, a second dielectric layer disposed on the bottom source/drain region and a top source/drain region disposed on the second dielectric layer and isolated from the bottom source/drain region by the second dielectric layer. The bottom source/drain region comprises a compressive pFET epitaxy and the top source/drain region comprises a tensile nFET epitaxy.