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US Patent 11923454 Epitaxial structure having super-lattice laminates

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 23, 2021
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Date of Patent
March 5, 2024
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Patent Application Number
17238330
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Patent Citations
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US Patent 8247842 Nitride semiconductor device having graded aluminum content
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US Patent 8264001 Semiconductor wafer having multi-layered buffer region formed from compound semiconductor materials
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US Patent 8405064 Nitride semiconductor device
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US Patent 8530935 Semiconductor device with buffer layer for mitigating stress exerted on compound semiconductor layer
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US Patent 8536615 Semiconductor device structures with modulated and delta doping and related methods
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US Patent 8742396 III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
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US Patent 9090993 Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate
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US Patent 9112077 Semiconductor structure
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US Patent 9184242 Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer
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US Patent 9287369 Nitride semiconductor element and nitride semiconductor wafer
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•••
Patent Inventor Names
Jia-Zhe Liu
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Wei-Jie Sie
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Ying-Ru Shih
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11923454
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Patent Primary Examiner
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Jay C Kim
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CPC Code
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H01L 29/7849
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H01L 29/7787
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H01L 29/157
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