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US Patent 11923807 Integrated circuit yield improvement

Patent 11923807 was granted and assigned to pSemi on March, 2024 by the United States Patent and Trademark Office.

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Patent

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pSemi

Current Assignee

pSemi

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

119238070

Patent Inventor Names

Parvez H. Daruwalla0

Yucheng Tong0

Jonathan James Klaren0

Date of Patent

March 5, 2024

Patent Application Number

173314360

Date Filed

May 26, 2021

Patent Citations

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US Patent 8779859 Multi-cascode amplifier bias techniques

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US Patent 10291194 System and method for biasing an RF circuit

Patent Primary Examiner

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...

Patent abstract

Circuits and methods for improving IC yield during automated test equipment (ATE) calibration of circuit designs which require I

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